中圖分類號： TN432；TN773
文獻標識碼： A
DOI：10.16157/j.issn.0258-7998.211716
中文引用格式： 趙玉楠，潘俊仁，彭堯，等. 一種基于130 nm CMOS工藝的K波段上/下雙向混頻器[J].電子技術(shù)應(yīng)用，2022，48(1)：94-99.
英文引用格式： Zhao Yunan，Pan Junren，Peng Yao，et al. A K-band up/down bidirectional mixer in 130 nm CMOS[J]. Application of Electronic Technique，2022，48(1)：94-99.

A K-band up/down bidirectional mixer in 130 nm CMOS

Abstract： An active bidirectional mixer performing the up/down conversion is proposed at K-band with a 130 nm CMOS in this paper. The mixer performs the down conversion in the Rx mode and converts the radio frequency(RF) signal amplified by low noise amplifier(LNA) into the intermediate frequency(IF) signal, whereas carries out the up conversion in the Tx mode and shifts the baseband(BB) signal up to the RF signal for the power amplifier(PA). Post-simulation results shows that with 0 dBm local oscillator(LO) drives, the mixer achieves the conversion gain(CG), noise figure(NF), and output 1 dB compression point(OP1dB) of -1.1~ -0.4 dB, 12.9~13.3 dB from 23 to 25 GHz, and -8.2 dBm@24 GHz in up-conversion mode, respectively. In down-conversion mode, the mixer exhibits the CG, NF, and iutput 1 dB compression point(IP1dB) of 2.4~3.4 dB, 15.2~15.6 dB from 23 to 25 GHz, and -3.6 dBm@24 GHz, respectively. The chip area is 0.6 mm2, which consumes 12 mW from a supply of 1.5 V.

Key words : up/down bidirectional mixer；K-band；CMOS；active balun